Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMS3500, MOSFET

May 2009

FDMS3500 Rev.C

www.fairchildsemi.com

FDMS3500 N-Channel Power Trench

MOSFET

FDMS3500

N-Channel Power Trench

MOSFET

75V, 49A, 14.5m:

Features

 Max r

DS(on)

= 14.5m: at V

= 10V, I

= 11.5A

 Max r

DS(on)

= 16.3m: at V

= 4.5V, I

= 10A

 Advanced Package and Silicon combination for low r

DS(on)

 MSL1 robust package design

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Application

 DC - DC Conversion

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 75 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) T

= 25°C 49

-Continuous (Silicon limited) T

= 25°C 57

-Continuous T

= 25°C (Note 1a) 9.2

-Pulsed 100

Single Pulse Avalanche Energy (Note 3) 384 mJ

Power Dissipation T

= 25°C 96

Power Dissipation T

= 25°C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

TJC

Thermal Resistance, Junction to Case 1.3

°C/W

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDMS3500 FDMS3500 Power 56 13’’ 12mm 3000 units

Bottom

Power 56

Top

Pin 1

Summary of content (7 pages)

PAGE 1
FDMS3500 tm ® N-Channel Power Trench MOSFET 75V, 49A, 14.5m: Features General Description Max rDS(on) = 14.5m: at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 16.3m: at VGS = 4.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 60V, 1 PA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.
PAGE 3
.0 VGS = 10V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 VGS = 4V ID, DRAIN CURRENT (A) 80 VGS = 3.5V VGS = 4.5V 60 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX 40 VGS = 3V 20 0 0 1 2 2.5 VGS = 3.5V 2.0 VGS = 4V 1.5 1.0 0.5 3 0 20 40 60 80 100 ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.0 40 ID = 11.5A VGS = 10V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.
PAGE 4
10000 ID = 11.5A 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 40V 6 VDD = 30V VDD = 50V 4 Ciss 1000 Coss 100 2 30 0.1 0 0 10 20 30 40 50 60 70 1 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 60 ID, DRAIN CURRENT (A) 20 IAS, AVALANCHE CURRENT(A) 75 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 10 TJ = 25oC TJ = 125oC 50 40 VGS = 10V Limited by Package 30 VGS = 4.5V 20 10 o RTJC = 1.3 C/W 1 0.01 0.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA o RTJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMS3500 Rev.C1 5 www.fairchildsemi.
PAGE 6
FDMS3500 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMS3500 Rev.C1 6 www.fairchildsemi.
PAGE 7
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.