Datasheet
FDMS3620S PowerTrench
®
PowerStage
©2012 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
FDMS3620S Rev.C1
Typical Characteristics (Q1 N-Channel) T
J
= 25°C unless otherwise noted
Figure 1.
0.0 0.3 0.6 0.9 1.2 1.5
0
10
20
30
40
50
60
70
V
GS
= 2.5 V
V
GS
= 3 V
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
= 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
On Region Characteristics Figure 2.
0 10203040506070
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 3.5 V
V
GS
= 10 V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
Fi g u r e 3 . No r m al i z ed O n R e s ist a nce
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
I
D
= 17.5 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
vs Junction Temperature
Figure 4.
2345678910
0
4
8
12
16
20
T
J
= 125
o
C
I
D
= 17.5 A
T
J
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
O n- Re si st an ce v s G at e t o
Source Voltage
Figure 5. Transfer Characteristics
0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
50
60
70
T
J
= 150
o
C
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
T
J
= -55
o
C
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
70
T
J
= -55
o
C
T
J
= 25
o
C
T
J
= 150
o
C
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
S ou r ce t o Dr ai n D io de
Forward Voltage vs Source Current