Datasheet

FDMS3622S PowerTrench
®
Power Stage
©2011 Fairchild Semiconductor Corporation 10 www.fairchildsemi.com
FDMS3622S Rev.C2
SyncFET Schottky body diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverse recovery
characteristic of the FDMS3622S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0 40 80 120 160 200 240 280 320 360
-5
0
5
10
15
20
25
30
35
40
CURRENT (A)
TIME (ns)
di/dt = 300 A/μs
0 5 10 15 20 25
10
-6
10
-5
10
-4
10
-3
10
-2
T
J
= 125
o
C
T
J
= 100
o
C
T
J
= 25
o
C
I
DSS
, REVERSE LEAKAGE CURRENT (A)
V
DS
, REVERSE VOLTAGE (V)
Typical Characteristics (continued)
Figure 27. FDMS3622S SyncFET body
diode reverse recovery characteristic
Figure 28. SyncFET body diode reverse
leakage versus drain-source voltage