Datasheet

November 2013
©2009 Fairchild Semiconductor Corporation
FDMS3662 Rev.C2
www.fairchildsemi.com
1
FDMS3662 N-Channel Power Trench
®
MOSFET
FDMS3662
N-Channel Power Trench
®
MOSFET
100V, 39A, 14.8mΩ
Features
Max r
DS(on)
= 14.8mΩ at V
GS
= 10V, I
D
= 8.9A
Advanced Package and Silicon combination for low r
DS(on)
MSL1 robust package design
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC - DC Conversion
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25°C 39
A -Continuous T
A
= 25°C (Note 1a) 8.9
-Pulsed 90
E
AS
Single Pulse Avalanche Energy (Note 3) 384 mJ
P
D
Power Dissipation T
C
= 25°C 104
W
Power Dissipation T
A
= 2C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 1.2
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS3662 FDMS3662 Power 56 13’’ 12mm 3000 units
Bottom
Power 56
Top
Pin 1
G
S
S
S
D
D
D
D
D
D
D
D
S
S
S
G
Pin 1

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