Datasheet

August 2009
©2009 Fairchild Semiconductor Corporation
FDMS6673BZ RevC
3
www.fairchildsemi.com
1
FDMS6673BZ P-Channel PowerTrench
®
MOSFET
FDMS6673BZ
P-Channel PowerTrench
®
MOSFET
-30 V, -28 A, 6.8 m:
Features
 Max r
DS(on)
= 6.8 m: at V
GS
= -10 V, I
D
= -15.2 A
 Max r
DS(on)
= 12.5 m: at V
GS
= -4.5 V, I
D
= -11.2 A
 Advanced Package and Silicon combination
for low r
DS(on)
 HBM ESD protection level of 8 kV typical(note 3)
 MSL1 robust package design
 RoHS Compliant
General Description
The FDMS6673BZ has been designed to minimize losses in load
switch applications. Advancements in both silicon and package
technologies have been combined to offer the lowest r
DS(on)
and
ESD protection.
Applications
 Load Switch in Notebook and Server
 Notebook Battery Pack Power Management
Bottom
Power 56
Top
Pin 1
G
S
S
S
D
D
D
D
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
MOSFET Maximum Ratings T
C
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -30 V
V
GS
Gate to Source Voltage ±25 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C -28
A
-Continuous (Silicon limited) T
C
= 25 °C -90
-Continuous T
A
= 25 °C (Note 1a) -15.2
-Pulsed -120
P
D
Power Dissipation T
C
= 25 °C 73
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
TJC
Thermal Resistance, Junction to Case 1.7
°C/W
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS6673BZ FDMS6673BZ Power 56 13 ’’ 12 mm 3000 units