Datasheet

May 2009
FDMS6681Z P-Channel PowerTrench
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDMS6681Z Rev.C4
www.fairchildsemi.com
1
FDMS6681Z
P-Channel PowerTrench
®
MOSFET
-30 V, -49 A, 3.2 m:
Features
 Max r
DS(on)
= 3.2 m: at V
GS
= -10 V, I
D
= -21.1 A
 Max r
DS(on)
= 5.0 m: at V
GS
= -4.5 V, I
D
= -15.7 A
 Advanced Package and Silicon combination
for low r
DS(on)
 HBM ESD protection level of 8kV typical(note 3)
 MSL1 robust package design
 RoHS Compliant
General Description
The FDMS6681Z has been designed to minimize losses in load
switch applications. Advancements in both silicon and package
technologies have been combined to offer the lowest r
DS(on)
and
ESD protection.
Applications
 Load Switch in Notebook and Server
 Notebook Battery Pack Power Management
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage -30 V
V
GS
Gate to Source Voltage ±25 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C -49
A
-Continuous (Silicon limited) T
C
= 25 °C -116
-Continuous T
A
= 25 °C (Note 1a) -21.1
-Pulsed -90
P
D
Power Dissipation T
C
= 25 °C 73
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
TJC
Thermal Resistance, Junction to Case 1.7
°C/W
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS6681Z FDMS6681Z Power 56 13 ’’ 12 mm 3000 units
Bottom
Power 56
Top
Pin 1
G
S
S
S
D
D
D
D