Datasheet

FDMS7556S N-Channel Power Trench
®
SyncFET
TM
©2013 Fairchild Semiconductor Corporation
FDMS7556S Rev.C3
www.fairchildsemi.com
1
March 2013
FDMS7556S
N-Channel PowerTrench
®
SyncFET
TM
25 V, 130 A, 1.2 mΩ
Features
Max r
DS(on)
= 1.2 mΩ at V
GS
= 10 V, I
D
= 35 A
Max r
DS(on)
= 1.65 mΩ at V
GS
= 4.5 V, I
D
= 31 A
Advanced Package and Silicon combination for low r
DS(on)
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
The FDMS7556S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for Synchronous Buck Converters
Notebook
Server
Telecom
High Efficiency DC-DC Switch Mode Power Supplies
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 25 V
V
GS
Gate to Source Voltage (Note 4) ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 130
A
-Continuous (Silicon limited) T
C
= 25 °C 222
-Continuous T
A
= 25 °C (Note 1a) 35
-Pulsed 200
E
AS
Single Pulse Avalanche Energy (Note 3) 312 mJ
P
D
Power Dissipation T
C
= 25 °C 96
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 1.3
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7556S FDMS7556S Power 56 13 ’’ 12 mm 3000 units
4
3
2
1
5
6
7
8
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
G
S
S
S
Pin 1
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