Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMS7570S, MOSFET

FDMS7570S N-Channel PowerTrench

SyncFET

FDMS7570S Rev.C

www.fairchildsemi.com

December 2009

FDMS7570S

N-Channel PowerTrench

SyncFET

25 V, 49 A, 1.95 mΩ

Features

 Max r

DS(on)

= 1.95 mΩ at V

= 10 V, I

= 28 A

 Max r

DS(on)

= 2.85 mΩ at V

= 4.5 V, I

= 22 A

 Advanced Package and Silicon combination for low r

DS(on)

and high efficiency

 SyncFET Schottky Body Diode

 MSL1 robust package design

 100% UIL tested

 RoHS Compliant

General Description

The FDMS7570S has been designed to minimize losses in

power conversion application. Advancements in both silicon and

package technologies have been combined to offer the lowest

DS(on)

while maintaining excellent switching performance. This

device has the added benefit of an efficient monolithic Schottky

body diode.

Applications

 Synchronous Rectifier for Synchronous Buck Converters

 Notebook

 Server

 Telecom

 High Efficiency DC-DC Switch Mode Power Supplies

Pin 1

Bottom

Top

Power 56

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 25 V

Gate to Source Voltage (Note 4) ±20 V

Drain Current -Continuous (Package limited) T

= 25 °C 49

-Continuous (Silicon limited) T

= 25 °C 156

-Continuous T

= 25 °C (Note 1a) 28

-Pulsed 180

Single Pulse Avalanche Energy (Note 3) 144 mJ

Power Dissipation T

= 25 °C 83

Power Dissipation T

= 25 °C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 1.5

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7570S FDMS7570S Power 56 13 ’’ 12 mm 3000 units

Summary of content (8 pages)

PAGE 1
FDMS7570S N-Channel PowerTrench® SyncFETTM 25 V, 49 A, 1.95 mΩ Features General Description Max rDS(on) = 1.95 mΩ at VGS = 10 V, ID = 28 A The FDMS7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 2.85 mΩ at VGS = 4.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 µA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.
PAGE 3
8 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX VGS = 10 V 135 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 180 VGS = 4.5 V VGS = 3.5 V VGS = 3 V 90 45 VGS = 2.7 V 0 0 1 2 3 4 6 VGS = 3 V 4 VGS = 3.5 V 2 VGS = 4.5 V VGS = 10 V 0 5 0 45 90 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 180 8 ID = 28 A VGS = 10 V 1.4 rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.
PAGE 4
5000 ID = 28A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 13 V 6 VDD = 10 V VDD = 16 V 4 1000 Coss 2 f = 1 MHz VGS = 0 V 0 0 10 20 30 40 1 Figure 7. Gate Charge Characteristics 160 ID, DRAIN CURRENT (A) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC VGS = 10 V 120 VGS = 4.5 V 80 40 o Limited by Package 1 0.01 0.1 1 10 100 0 25 1000 50 75 100 125 150 o Figure 9. Unclamped Inductive Switching Capability Figure 10.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS7570S Rev.C 5 www.fairchildsemi.
PAGE 6
SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7570S.
PAGE 7
FDMS7570S N-Channel PowerTrench® SyncFET Dimensional Outline and Pad Layout FDMS7570S Rev.C 7 www.fairchildsemi.
PAGE 8
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.