Datasheet

FDMS7600AS Dual N-Channel PowerTrench
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDMS7600AS Rev.C1
www.fairchildsemi.com
10
SyncFET
TM
Schottky body diode
Characteristics
Fairchild’s SyncFET
TM
process embeds a Schottky diode in
parallel with PowerTrench
®
MOSFET. This diode exhibits similar
ch
aracteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 25 shows the reverse recovery
characteristic of the FDMS7600AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
Typical Characteristics (continued)
Figure 25. FDMS7600AS SyncFET
TM
Body
Diode Reverse Recovery Characteristic
Figure 26. SyncFET
TM
Body Diode Reverse
Leakage vs. Drain-Source Voltage
150 200 250 300
-5
0
5
10
15
didt = 300 A/μs
CURRENT (A)
TIME (ns)
0 5 10 15 20 25 30
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
T
J
= 125
o
C
T
J
= 100
o
C
T
J
= 25
o
C
I
DSS
, REVERSE LEAKAGE CURRENT (A)
V
DS
, REVERSE VOLTAGE (V)