Datasheet

FDMS7600AS Dual N-Channel PowerTrench
®
MOSFET
©2009 Fairchild Semiconductor Corporation
FDMS7600AS Rev.C1
www.fairchildsemi.com
2
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250 μA, V
GS
= 0 V
I
D
= 1 mA, V
GS
= 0 V
Q1
Q2
30
30
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, referenced to 25 °C
I
D
= 1 mA, referenced to 25 °C
Q1
Q2
15
18
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 24 V, V
GS
= 0 V
Q1
Q2
1
500
μA
μA
I
GSS
Gate to Source Leakage Current V
GS
= 20 V, V
DS
= 0 V
Q1
Q2
100
100
nA
nA
On Characteristics
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250 μA
V
GS
= V
DS
, I
D
= 1 mA
Q1
Q2
1
1
1.8
1.5
3
3
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25 °C
I
D
= 1 mA, referenced to 25 °C
Q1
Q2
-6
-5
mV/
°C
r
DS(on)
Drain to Source On Resistance
V
GS
= 10 V, I
D
= 12 A
V
GS
= 4.5 V, I
D
= 10 A
V
GS
= 10 V, I
D
= 12 A , T
J
= 125 °C
Q1
6.0
8.5
8.3
7.5
12
12
mΩ
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 18 A
V
GS
= 10 V, I
D
= 20 A , T
J
= 125 °C
Q2
2.2
2.6
2.6
2.8
3.3
3.8
g
FS
Forward Transconductance
V
DS
= 5 V, I
D
= 12 A
V
DS
= 5 V, I
D
= 20 A
Q1
Q2
63
190
S
Dynamic Characteristics
C
iss
Input Capacitance
Q1:
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHZ
Q2:
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHZ
Q1
Q2
1315
5265
1750
7005
pF
C
oss
Output Capacitance
Q1
Q2
445
2150
600
2860
pF
C
rss
Reverse Transfer Capacitance
Q1
Q2
45
200
70
300
pF
R
g
Gate Resistance
Q1
Q2
0.9
0.3
Ω
Switching Characteristics
t
d(on)
Turn-On Delay Time
Q1:
V
DD
= 15 V, I
D
= 12 A,
V
GS
= 10 V, R
GEN
= 6 Ω
Q2:
V
DD
= 15 V, I
D
= 20 A,
V
GS
= 10 V, R
GEN
= 6 Ω
Q1
Q2
8.6
18
18
32
ns
t
r
Rise Time
Q1
Q2
2.5
7.6
10
16
ns
t
d(off)
Turn-Off Delay Time
Q1
Q2
20
45
32
72
ns
t
f
Fall Time
Q1
Q2
2.3
5.2
10
10
ns
Q
g
Total Gate Charge V
GS
= 0 V to 10 V
Q1
V
DD
= 15 V,
I
D
= 12 A
Q2
V
DD
= 15 V,
I
D
= 20 A
Q1
Q2
20
81
28
113
nC
Q
g
Total Gate Charge V
GS
= 0 V to 4.5 V
Q1
Q2
9.3
37
13
52
nC
Q
gs
Gate to Source Gate Charge
Q1
Q2
4.3
13
nC
Q
gd
Gate to Drain “Miller” Charge
Q1
Q2
2.2
9.6
nC