Datasheet

May 2014
FDMS7620S Dual N-Channel PowerTrench
®
MOSFET
©2013 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDMS7620S Rev.C2
FDMS7620S
Dual N-Channel PowerTrench
®
MOSFET
Q1: 30 V, 13 A, 20.0 mΩ Q2: 30 V, 22 A, 11.2 mΩ
Features
Q1: N-Channel
Max r
DS(on)
= 20.0 mΩ at V
GS
= 10 V, I
D
= 10.1 A
Max r
DS(on)
= 30.0 mΩ at V
GS
= 4.5 V, I
D
= 7.5 A
Q2: N-Channel
Max r
DS(on)
= 11.2 mΩ at V
GS
= 10 V, I
D
= 12.4 A
Max r
DS(on)
= 14.2 mΩ at V
GS
= 4.5 V, I
D
= 10.9 A
Pinout optimized for simple PCB design
Thermally efficient dual Power 56 Package
RoHS Compliant
General Description
This device includes two specialized MOSFETs in a unique dual
Power 56 package. It is designed to provide an optimal synchro-
nous buck power stage in terms of efficiency and PCB utilization.
T
he low switching loss “High Side” MOSFET is complementory
by a low conduction loss “Low Side” SyncFET.
Applications
Synchronous Buck Converter for:
Notebook System Power
General Purpose Point of Load
Power 56
S2
S2
S2
G2
D1
D1
D1
G1
D1
S1/D2
Top
Bottom
Pin1
4
3
2
1
5
6
7
8
Q 1
Q
2
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Q1 Q2 Units
V
DS
Drain to Source Voltage 30 30 V
V
GS
Gate to Source Voltage (Note 3) ±20 ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 13 22
A -Continuous T
A
= 25 °C 10.1 12.4
-Pulsed 27 45
E
AS
Single Pulse Avalanche Energy (Note 4) 9 21 mJ
P
D
Power Dissipation for Single Operation T
A
= 25°C 2.2
1a
2.5
1b
W
Power Dissipation for Single Operation T
A
= 25°C 1.0
1c
1.0
1d
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJA
Thermal Resistance, Junction to Ambient 57
1a
50
1b
°C/W
R
θJA
Thermal Resistance, Junction to Ambient 125
1c
120
1d
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7620S FDMS7620S Power 56 13 ” 12
mm 3000 units

Summary of content (12 pages)