Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMS7656AS, MOSFET

September 2009

FDMS7656AS N-Channel PowerTrench

SyncFET

™

FDMS7656AS Rev.C

www.fairchildsemi.com

FDMS7656AS

N-Channel PowerTrench

SyncFET

™

30 V, 49 A, 1.8 mΩ

Features

 Max r

DS(on)

= 1.8 mΩ at V

= 10 V, I

= 30 A

 Max r

DS(on)

= 1.9 mΩ at V

= 7 V, I

= 27 A

 Advanced Package and Silicon combination for low r

DS(on)

and high efficiency

 SyncFET Schottky Body Diode

 MSL1 robust package design

 100% UIL tested

 RoHS Compliant

General Description

The FDMS7656AS has been designed to minimize losses in

power conversion application. Advancements in both silicon and

package technologies have been combined to offer the lowest

DS(on)

while maintaining excellent switching performance. This

device has the added benefit of an efficient monolithic Schottky

body diode.

Applications

 Synchronous Rectifier for DC/DC Converters

 Notebook Vcore/ GPU low side switch

 Networking Point of Load low side switch

 Telecom secondary side rectification

Pin 1

Bottom

Top

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 30 V

Gate to Source Voltage (Note 4) ±20 V

Drain Current -Continuous (Package limited) T

= 25 °C 49

-Continuous (Silicon limited) T

= 25 °C 194

-Continuous T

= 25 °C (Note 1a) 31

-Pulsed 180

dv/dt MOSFET dv/dt 1.3 V/ns

Single Pulse Avalanche Energy (Note 3) 242 mJ

Power Dissipation T

= 25 °C 96

Power Dissipation T

= 25 °C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 1.3

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7656AS FDMS7656AS Power 56 13 ’’ 12 mm 3000 units

Summary of content (8 pages)

PAGE 1
FDMS7656AS N-Channel PowerTrench® SyncFET™ 30 V, 49 A, 1.8 mΩ Features General Description The FDMS7656AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 1.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 30 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA 3.
PAGE 3
6 VGS = 10 V 150 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 180 VGS = 4.5 V VGS = 4 V 120 VGS = 3.5 V VGS = 3 V 90 60 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 30 0 0.0 0.5 1.0 1.5 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 5 VGS = 3 V 4 3 VGS = 3.5 V 2 VGS = 4 V 1 2.0 0 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 90 120 150 180 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.5 6 ID = 30 A VGS = 10 V 1.4 rDS(on), DRAIN TO 1.3 1.2 1.
PAGE 4
10000 ID = 30 A Ciss 8 VDD = 10 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 20 V 6 VDD = 15 V 4 Coss 1000 2 f = 1 MHz VGS = 0 V 0 20 40 60 80 100 1 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 200 ID, DRAIN CURRENT (A) 50 IAS, AVALANCHE CURRENT (A) Crss 100 0.1 0 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 150 VGS = 10 V 100 VGS = 4.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS7656AS Rev.C 5 www.fairchildsemi.
PAGE 6
SyncFET Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MoSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverses recovery characteristic of the FDMS7656AS.
PAGE 7
FDMS7656AS N-Channel PowerTrench® SyncFET™ Dimensional Outline and Pad Layout FDMS7656AS Rev.C 7 www.fairchildsemi.
PAGE 8
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.