Datasheet

FDMS7672AS N-Channel PowerTrench
®
SyncFET
TM
©2009 Fairchild Semiconductor Corporation
FDMS7672AS Rev.C
www.fairchildsemi.com
1
September 2009
FDMS7672AS
N-Channel PowerTrench
®
SyncFET
TM
30 V, 42 A, 4 mΩ
Features
 Max r
DS(on)
= 4.0 mΩ at V
GS
= 10 V, I
D
= 18 A
 Max r
DS(on)
= 4.5 mΩ at V
GS
= 7 V, I
D
= 16 A
 Advanced Package and Silicon combination for low r
DS(on)
and high efficiency
 SyncFET Schottky Body Diode
 MSL1 robust package design
 100% UIL tested
 RoHS Compliant
General Description
The FDMS7672AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
 Synchronous Rectifier for DC/DC Converters
 Notebook Vcore/ GPU low side switch
 Networking Point of Load low side switch
 Telecom secondary side rectification
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage (Note 4) ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 42
A
-Continuous (Silicon limited) T
C
= 25 °C 83
-Continuous T
A
= 25 °C (Note 1a) 19
-Pulsed 90
dv/dt MOSFET dv/dt 2.6 V/ns
E
AS
Single Pulse Avalanche Energy (Note 3) 60 mJ
P
D
Power Dissipation T
C
= 25 °C 46
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 2.7
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7672AS FDMS7672AS Power 56 13 ’’ 12 mm 3000 units
4
3
2
1
5
6
7
8
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
G
S
S
S
Pin 1
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