Datasheet

July 2009
©2009 Fairchild Semiconductor Corporation
FDMS7676 RevA
www.fairchildsemi.com
1
FDMS7676 N-Channel PowerTrench
®
MOSFET
FDMS7676
N-Channel PowerTrench
®
MOSFET
30 V, 5.5 m:
Features
Max r
DS(on)
= 5.5 m: at V
GS
= 10 V, I
D
= 19 A
Max r
DS(on)
= 7.6 m: at V
GS
= 4.5 V, I
D
= 15 A
Advanced Package and Silicon design for low r
DS(on)
and high
efficiency
Next generation enhanced body diode technology, engineered
for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
DS(on)
, fast switching speed and body
diode reverse recovery performance.
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
DC-DC Conversion
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage (Note 4) ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 28
A
-Continuous (Silicon limited) T
C
= 25 °C 76
-Continuous T
A
= 25 °C (Note 1a) 16
-Pulsed 90
E
AS
Single Pulse Avalanche Energy (Note 3) 72 mJ
P
D
Power Dissipation T
C
= 25 °C 48
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
TJC
Thermal Resistance, Junction to Case 2.6
°C/W
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7676 FDMS7676 Power 56 13 ’’ 12 mm 3000 units
Power 56
D
D
D
D
G
S
S
S
Pin 1
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