Datasheet
December 2011
©2011 Fairchild Semiconductor Corporation
FDMS8018 Rev.C
www.fairchildsemi.com
1
FDMS8018 N-Channel PowerTrench
®
MOSFET
FDMS8018
N-Channel PowerTrench
®
MOSFET
30 V, 120 A, 1.8 mΩ
Features
Max r
DS(on)
= 1.8 mΩ at V
GS
= 10 V, I
D
= 30 A
Max r
DS(on)
= 2.4 mΩ at V
GS
= 4.5 V, I
D
= 26 A
Advanced Package and Silicon combination for low r
DS(on)
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
DS(on)
, fast switching speed ang body
diode reverse recovery performance.
Applications
VRM Vcore Switching for Desktop and Server
OringFET / Load Switching
DC-DC Conversion
Motor Bridge Switch
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
Pin 1
D
D
D
D
S
S
S
G
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage (Note 4) ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 120
A
-Continuous (Package limited) T
C
= 100 °C 100
-Continuous (Silicon limited) T
C
= 25 °C 174
-Continuous T
A
= 25 °C (Note 1a) 30
-Pulsed 180
E
AS
Single Pulse Avalanche Energy (Note 3) 126 mJ
P
D
Power Dissipation T
C
= 25 °C 83
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 1.5
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8018 FDMS8018 Power 56 13 ’’ 12 mm 3000 units