Datasheet

April 2013
FDMS8090 PowerTrench
®
Symmetrical Dual
©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDMS8090 Rev.C1
Bottom
Top
G1
S1
S1
S1
D1
D2
G2
S2
S2
S2
G2
S2
S2
S2
G1
S1 S1
S1
Pin 1
Pin 1
1
2
3
4
8
7
6
5
Contact to D1
(backside)
Q1 Q2
Contact to D2
(backside)
Power 56
FDMS8090
PowerTrench
®
Symmetrical Dual
100 V N-Channel MOSFET
Features
 Max r
DS(on)
= 13 mΩ at V
GS
= 10 V, I
D
= 10 A
 Max r
DS(on)
= 20 mΩ at V
GS
= 6 V, I
D
= 8 A
 Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
 MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
 100% UIL tested
 RoHS Compliant
General Description
This device includes two fast switching (Qgd minimized) 100V
N-Channel MOSFETs in a dual Power 56 (5 mm X 6 mm MLP)
package. The package is enhanced for exceptional thermal
performance.
Applications
 Bridge Topologies
 Synchronous Rectifier Pair
 Motor Drives
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 40
A -Continuous T
A
= 25 °C (Note 1a) 10
-Pulsed (Note 4) 120
E
AS
Single Pulse Avalanche Energy (Note 3) 253 mJ
P
D
Power Dissipation T
C
= 25 °C 59
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.2
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 2.1
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 55
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8090 FDMS8090 Power 56 13 ’’ 12
mm 3000 units