Datasheet

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FDMS8460 Rev.C

www.fairchildsemi.com

FDMS8460 N-Channel Power Trench

MOSFET

FDMS8460

N-Channel Power Trench

MOSFET

40V, 49A, 2.2m:

Features

 Max r

DS(on)

= 2.2m: at V

= 10V, I

= 25A

 Max r

DS(on)

= 3.0m: at V

= 4.5V, I

= 21.7A

 Advanced Package and Silicon combination for low r

DS(on)

 MSL1 robust package design

 100% UIL tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process thant has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Application

 DC - DC Conversion

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) T

= 25°C 49

-Continuous (Silicon limited) T

= 25°C 167

-Continuous T

= 25°C (Note 1a) 25

-Pulsed 160

Single Pulse Avalanche Energy (Note 3) 864 mJ

Power Dissipation T

= 25°C 104

Power Dissipation T

= 25°C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

TJC

Thermal Resistance, Junction to Case 1.2

°C/W

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDMS8460 FDMS8460 Power 56 13’’ 12 mm 3000 units

Bottom

Power 56

Top

Pin 1

December 2012

Summary of content (7 pages)

PAGE 1
FDMS8460 N-Channel Power Trench® MOSFET 40V, 49A, 2.2m: Features General Description Max rDS(on) = 2.2m: at VGS = 10V, ID = 25A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 3.0m: at VGS = 4.5V, ID = 21.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient 40 V ID = 250PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VGS = 0V, VDS = 32V, 1 PA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA 3.
PAGE 3
5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 160 VGS = 4V VGS = 3.5V ID, DRAIN CURRENT (A) 120 VGS = 4.5V PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX VGS = 10V 80 40 VGS = 3V 0 0 1 2 VGS = 3V 4 VGS = 3.5V 3 2 VGS = 4V 3 Figure 1. On-Region Characteristics VGS = 10V 40 80 ID, DRAIN CURRENT(A) 120 160 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 10 ID = 25A VGS = 10V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.
PAGE 4
10000 ID = 25A VDD = 15V 8 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 20V 6 VDD = 25V 4 1000 Coss 100 2 30 0.1 0 0 20 40 60 80 Figure 7. Gate Charge Characteristics 200 ID, DRAIN CURRENT (A) 10 TJ = 25oC TJ = 125oC 150 VGS = 10V 100 VGS = 4.5V 50 o Limited by Package 1 0.01 0.1 1 10 100 0 25 1000 50 RTJC = 1.2 C/W 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) Figure 9. Unclamped Inductive Switching Capability Figure 10.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA o RTJA = 125 C/W 1E-3 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS8460 Rev.C3 5 www.fairchildsemi.
PAGE 6
FDMS8460 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMS8460 Rev.C3 6 www.fairchildsemi.
PAGE 7
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.