Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMS8558SDC, MOSFET

FDMS8558SDC N-Channel PowerTrench

SyncFET

FDMS8558SDC Rev.C2

www.fairchildsemi.com

July 2013

Bottom Top

Pin 1

Power 56

FDMS8558SDC

N-Channel PowerTrench

SyncFET

25 V, 90 A, 1.5 mΩ

Features

 Dual Cool

PQFN package

 Max r

DS(on)

= 1.5 mΩ at V

= 10 V, I

= 38 A

 Max r

DS(on)

= 1.7 mΩ at V

= 4.5 V, I

= 36 A

 High performance technology for extremely low r

DS(on)

 SyncFET

Schottky Body Diode

 RoHS Compliant

General Description

This N-Channel SyncFET

is produced using Fairchild

Semiconductor’s advanced PowerTrench

process.

Advancements in both silicon and package technologies have

been combined to offer the lowest r

DS(on)

while maintaining

excellent switching performance by extremely low Junction-to-

Ambient thermal resistance. This device has the added benefit

of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters

 Telecom Secondary Side Rectification

 High End Server/Workstation Vcore Low Side

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 25 V

Gate to Source Voltage 12 V

Drain Current -Continuous (Package limited) T

= 25 °C 90

A -Continuous T

= 25 °C (Note 1a) 38

-Pulsed 140

Single Pulse Avalanche Energy (Note 3) 145 mJ

Power Dissipation T

= 25 °C 89

Power Dissipation T

= 25 °C (Note 1a) 3.3

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case (Top Source) 2.8

θJC

Thermal Resistance, Junction to Case (Bottom Drain) 1.4

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 38

θJA

Thermal Resistance, Junction to Ambient (Note 1b) 81

θJA

Thermal Resistance, Junction to Ambient (Note 1i) 16

θJA

Thermal Resistance, Junction to Ambient (Note 1j) 23

θJA

Thermal Resistance, Junction to Ambient (Note 1k) 11

Device Marking Device Package Reel Size Tape Width Quantity

09DC FDMS8558SDC Power 56 13’’ 12 mm 3000 units

Summary of content (9 pages)

PAGE 1
N-Channel PowerTrench® SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-toAmbient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 25 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current VGS = +12 V/-8 V, VDS = 0 V ±100 nA 2.
PAGE 3
RθJC Thermal Resistance, Junction to Case (Top Source) 2.8 RθJC Thermal Resistance, Junction to Case (Bottom Drain) 1.
PAGE 4
140 6 VGS = 4.5 V 120 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 10V VGS = 3.5 V VGS = 3 V 100 VGS = 2.5 V 80 60 40 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 20 0 0 0.2 0.4 0.6 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 5 VGS = 2.5 V 4 3 2 1 VGS = 10 V 0 0.8 0 20 40 Figure 1. On Region Characteristics rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.
PAGE 5
10000 ID = 38 A 8 Ciss CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = 10 V VDD = 13 V 4 VDD = 15 V Coss 1000 2 0 f = 1 MHz VGS = 0 V 0 15 30 45 60 75 90 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 200 100 VGS = 10 V ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 10 TJ = TJ 1 0.001 0.01 100 oC 150 VGS = 4.
PAGE 6
NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 SINGLE PULSE 0.001 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 81 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C2 6 www.fairchildsemi.
PAGE 7
SyncFETTM Schottky body diode Characteristics Fairchild’s SyncFETTM process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMS8558SDC. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
PAGE 8
FDMS8558SDC N-Channel PowerTrench® SyncFETTM Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMS8558SDC Rev.C2 8 www.fairchildsemi.
PAGE 9
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.