Datasheet
FDMS8570S N-Channel PowerTrench
®
SyncFET
TM
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D1
www.fairchildsemi.com
1
April 2012
4
3
2
1
5
6
7
8
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
FDMS8570S
N-Channel PowerTrench
®
SyncFET
TM
25 V, 60 A, 2.8 mΩ
Features
Max r
DS(on)
= 2.8 mΩ at V
GS
= 10 V, I
D
= 24 A
Max r
DS(on)
= 3.3 mΩ at V
GS
= 4.5 V, I
D
= 22 A
High performance technology for extremely low r
DS(on)
SyncFET
TM
Schottky Body Diode
RoHS Compliant
General Description
This N-Channel SyncFET
TM
is produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process.
Advancements in both silicon and package technologies have
been combined to offer the lowest r
DS(on)
while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 25 V
V
GS
Gate to Source Voltage 12 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 60
A -Continuous T
A
= 25 °C (Note 1a) 24
-Pulsed 100
E
AS
Single Pulse Avalanche Energy (Note 3) 45 mJ
P
D
Power Dissipation T
C
= 25 °C 48
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case T
C
= 25 °C 2.6
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
10OD FDMS8570S Power 56 13’’ 12 mm 3000 units