Datasheet

FDMS8570S N-Channel PowerTrench
®
SyncFET
TM
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D1
www.fairchildsemi.com
1
April 2012
4
3
2
1
5
6
7
8
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
FDMS8570S
N-Channel PowerTrench
®
SyncFET
TM
25 V, 60 A, 2.8 mΩ
Features
Max r
DS(on)
= 2.8 mΩ at V
GS
= 10 V, I
D
= 24 A
Max r
DS(on)
= 3.3 mΩ at V
GS
= 4.5 V, I
D
= 22 A
High performance technology for extremely low r
DS(on)
SyncFET
TM
Schottky Body Diode
RoHS Compliant
General Description
This N-Channel SyncFET
TM
is produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process.
Advancements in both silicon and package technologies have
been combined to offer the lowest r
DS(on)
while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 25 V
V
GS
Gate to Source Voltage 12 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 60
A -Continuous T
A
= 25 °C (Note 1a) 24
-Pulsed 100
E
AS
Single Pulse Avalanche Energy (Note 3) 45 mJ
P
D
Power Dissipation T
C
= 25 °C 48
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case T
C
= 25 °C 2.6
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
10OD FDMS8570S Power 56 13’’ 12 mm 3000 units

Summary of content (8 pages)