Datasheet

January 2013
©2013 Fairchild Semiconductor Corporation
FDMS86101 Rev.C9
www.fairchildsemi.com
1
FDMS86101 N-Channel PowerTrench
®
MOSFET
FDMS86101
N-Channel PowerTrench
®
MOSFET
100 V, 60 A, 8 mΩ
Features
Max r
DS(on)
= 8 mΩ at V
GS
= 10 V, I
D
= 13 A
Max r
DS(on)
= 13.5 mΩ at V
GS
= 6 V, I
D
= 9.5 A
Advanced Package and Silicon combination for low r
DS(on)
and high efficiency
MSL1 robust package design
100% UIL tested
100% Rg tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
®
process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC-DC Conversion
Bottom
Power 56
Top
Pin 1
G
S
S
S
D
D
D
D
D
D
D
D
S
S
S
G
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 60
A -Continuous T
A
= 25 °C (Note 1a) 12.4
-Pulsed 200
E
AS
Single Pulse Avalanche Energy (Note 3) 173 mJ
P
D
Power Dissipation T
C
= 25 °C 104
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 1.2
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86101 FDMS86101 Power 56 13 ’’ 12 mm 3000 units

Summary of content (7 pages)