Datasheet

October 2012
©2012 Fairchild Semiconductor Corporation
FDMS86104 Rev. C1
www.fairchildsemi.com
1
FDMS86104 N-Channel PowerTrench
®
MOSFET
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
D
D
D
D
S
S
S
G
FDMS86104
N-Channel PowerTrench
®
MOSFET
100 V, 16 A, 24 mΩ
Features
 Max r
DS(on)
= 24 mΩ at V
GS
= 10 V, I
D
= 7 A
 Max r
DS(on)
= 39 mΩ at V
GS
= 6 V, I
D
= 5.5 A
 Advanced Package and Silicon combination for low r
DS(on)
and high efficiency
 MSL1 robust package design
 100% UIL tested
 RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
®
process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
 DC-DC Conversion
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 16
A -Continuous T
A
= 25 °C (Note 1a) 7
-Pulsed 30
E
AS
Single Pulse Avalanche Energy (Note 3) 96 mJ
P
D
Power Dissipation T
C
= 25 °C 73
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 1.7
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86104 FDMS86104 Power 56 13 ’’ 12 mm 3000 units