Datasheet

January 2011
©2011 Fairchild Semiconductor Corporation
FDMS86105 Rev.C
www.fairchildsemi.com
1
FDMS86105 N-Channel PowerTrench
®
MOSFET
FDMS86105
N-Channel PowerTrench
®
MOSFET
100 V, 26 A, 34 mΩ
Features
 Max r
DS(on)
= 34 mΩ at V
GS
= 10 V, I
D
= 6 A
 Max r
DS(on)
= 54 mΩ at V
GS
= 6 V, I
D
= 4.5 A
 Advanced package and silicon combination for low r
DS(on)
and
high efficiency
 MSL1 robust package design
 100% UIL tested
 RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Applications
 Primary DC-DC
 Secondary DC-DC
 Load Switch
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 56
A
-Continuous (Silicon limited) T
C
= 25 °C 26
-Continuous T
A
= 25 °C (Note 1a) 6
-Pulsed 30
E
AS
Single Pulse Avalanche Energy (Note 3) 50 mJ
P
D
Power Dissipation T
C
= 25 °C 48
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 2.6
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86105 FDMS86105 Power 56 13 ’’ 12
mm 3000 units