Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMS86200, MOSFET

November 2012

FDMS86200 Rev.C3

www.fairchildsemi.com

FDMS86200 N-Channel Power Trench

MOSFET

FDMS86200

N-Channel Power Trench

MOSFET

150 V, 49 A, 18 mΩ

Features

 Max r

DS(on)

= 18 mΩ at V

= 10 V, I

= 9.6 A

 Max r

DS(on)

= 21 mΩ at V

= 6 V, I

= 8.8 A

 Advanced Package and Silicon combination for low r

DS(on)

and high efficiency

 MSL1 robust package design

 100% UIL tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Application

 DC-DC Conversion

Power 56

Pin 1

Bottom

Top

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

Drain Current -Continuous T

= 25 °C 49

A -Continuous T

= 25 °C (Note 1a) 9.6

-Pulsed 100

Single Pulse Avalanche Energy (Note 3) 220 mJ

Power Dissipation T

= 25 °C 104

Power Dissipation T

= 25 °C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 1.2

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86200 FDMS86200 Power 56 13 ’’ 12 mm 3000 units

Summary of content (7 pages)

PAGE 1
FDMS86200 N-Channel Power Trench® MOSFET 150 V, 49 A, 18 mΩ Features General Description Max rDS(on) = 18 mΩ at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 21 mΩ at VGS = 6 V, ID = 8.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V 100 nA 4.
PAGE 3
VGS = 10 V VGS = 5 V VGS = 6 V ID, DRAIN CURRENT (A) 80 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 60 40 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 VGS = 4.5 V 20 VGS = 4 V VGS = 4 V 3 VGS = 4.5 V VGS = 5 V 2 VGS = 6 V 1 0 0 0 1 2 3 4 0 5 20 40 Figure 1. On-Region Characteristics 100 50 rDS(on), DRAIN TO ID = 9.6 A VGS = 10 V 1.6 1.2 0.8 0.4 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 80 Figure 2.
PAGE 4
5000 ID = 9.6 A VDD = 75 V 8 VDD = 50 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 100 V 6 4 Ciss 1000 Coss 100 2 f = 1 MHz VGS = 0 V 10 0 5 10 15 20 25 30 35 1 Figure 7. Gate Charge Characteristics 100 Figure 8.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve FDMS86200 Rev.C3 5 www.fairchildsemi.
PAGE 6
FDMS86200 N-Channel Power Trench® MOSFET Dimensional Outline and Pad Layout FDMS86200 Rev.C3 6 www.fairchildsemi.
PAGE 7
tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.