Datasheet

July 2011
©2011 Fairchild Semiconductor Corporation
FDMS8622 Rev.C
www.fairchildsemi.com
1
FDMS8622 N-Channel PowerTrench
®
MOSFET
FDMS8622
N-Channel Power Trench
®
MOSFET
100 V, 16.5 A, 56 mΩ
Features
 Max r
DS(on)
= 56 mΩ at V
GS
= 10 V, I
D
= 4.8 A
 Max r
DS(on)
= 88 mΩ at V
GS
= 6 V, I
D
= 3.9 A
 High performance trench technology for extremely low r
DS(on)
 High power and current handling capability in a widely used
surface mount package
 100% UIL Tested
 Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
®
process that has
been optimized for
r
DS(on)
, switching performance and
ruggedness.
Applications
 POE Protection Switch
 DC-DC Switch
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 100 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 16.5
A
-Continuous (Silicon limited) T
C
= 25 °C 17
-Continuous T
A
= 25 °C (Note 1a) 4.8
-Pulsed 30
E
AS
Single Pulse Avalanche Energy (Note 3) 12 mJ
P
D
Power Dissipation T
C
= 25 °C 31
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case (Note 1) 4
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8622 FDMS8622 Power56 13 ’’ 12 mm 3000 units