Datasheet

May 2014
©2010 Fairchild Semiconductor Corporation
FDMS86252 Rev.C2
www.fairchildsemi.com
1
FDMS86252 N-Channel Shielded Gate PowerTrench
®
MOSFET
FDMS86252
N-Channel Shielded Gate PowerTrench
®
MOSFET
150 V, 16 A, 51 mΩ
Features
Shielded Gate MOSFET Technology
Max r
DS(on)
= 51 mΩ at V
GS
= 10 V, I
D
= 4.6 A
Max r
DS(on)
= 70 mΩ at V
GS
= 6 V, I
D
= 3.9 A
Advanced package and silicon combination for low r
DS(on)
and
high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process that
incorporates Shielded Gate technology. This process has been
optimized
for the on-state resistance and yet maintain superior
switching performance.
Application
DC-DC Conversion
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 150 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 16
A -Continuous T
A
= 25 °C (Note 1a) 4.6
-Pulsed 20
E
AS
Single Pulse Avalanche Energy (Note 3) 50 mJ
P
D
Power Dissipation T
C
= 25 °C 69
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 1.8
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86252 FDMS86252 Power 56 13 ’’ 12
mm 3000 units

Summary of content (7 pages)