Datasheet
May 2014
©2010 Fairchild Semiconductor Corporation
FDMS86252 Rev.C2
www.fairchildsemi.com
1
FDMS86252 N-Channel Shielded Gate PowerTrench
®
MOSFET
FDMS86252
N-Channel Shielded Gate PowerTrench
®
MOSFET
150 V, 16 A, 51 mΩ
Features
Shielded Gate MOSFET Technology
Max r
DS(on)
= 51 mΩ at V
GS
= 10 V, I
D
= 4.6 A
Max r
DS(on)
= 70 mΩ at V
GS
= 6 V, I
D
= 3.9 A
Advanced package and silicon combination for low r
DS(on)
and
high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench
®
process that
incorporates Shielded Gate technology. This process has been
optimized
for the on-state resistance and yet maintain superior
switching performance.
Application
DC-DC Conversion
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 150 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous T
C
= 25 °C 16
A -Continuous T
A
= 25 °C (Note 1a) 4.6
-Pulsed 20
E
AS
Single Pulse Avalanche Energy (Note 3) 50 mJ
P
D
Power Dissipation T
C
= 25 °C 69
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
θJC
Thermal Resistance, Junction to Case 1.8
°C/W
R
θJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86252 FDMS86252 Power 56 13 ’’ 12
mm 3000 units