Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMS86320, MOSFET

June 2014

FDMS86320 Rev.C2

www.fairchildsemi.com

FDMS86320 N-Channel PowerTrench

MOSFET

FDMS86320

N-Channel PowerTrench

MOSFET

80 V, 44 A, 11.7 mΩ

Features

 Max r

DS(on)

= 11.7 mΩ at V

= 10 V, I

= 10.5 A

 Max r

DS(on)

= 15 mΩ at V

= 8 V, I

= 8.5 A

 Advanced Package and Silicon combination for low r

DS(on)

and high efficiency

 Next generation enhanced body diode technology,

engineered for soft recovery

 MSL1 robust package design

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency and to minimize switch node

ringing of DC/DC converters using either synchronous or

conventional switching PWM controllers. It has been optimized

for low gate charge, low r

DS(on)

, fast switching speed and body

diode reverse recovery performance.

Applications

 Primary DC-DC Switch

 Motor Bridge Switch

 Synchronous Rectifier

Power 56

Pin 1

Bottom

Top

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 80 V

Gate to Source Voltage ±20 V

Drain Current -Continuous T

= 25 °C 44

A -Continuous T

= 25 °C (Note 1a) 10.5

-Pulsed 160

Single Pulse Avalanche Energy (Note 3) 60 mJ

Power Dissipation T

= 25 °C 69

Power Dissipation T

= 25 °C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 1.8

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86320 FDMS86320 Power 56 13 ’’ 12 mm 3000 units

Summary of content (7 pages)

PAGE 1
FDMS86320 N-Channel PowerTrench® MOSFET 80 V, 44 A, 11.7 mΩ Features General Description Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.
PAGE 3
4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 160 ID, DRAIN CURRENT (A) VGS = 10 V VGS = 9 V 120 VGS = 8 V 80 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 7 V 40 VGS = 6 V 0 0 1 2 3 4 VGS = 6 V VGS = 7 V 3 VGS = 8 V 2 VGS = 9 V 1 0 0 5 40 80 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics ID = 10.5 A VGS = 10 V rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.
PAGE 4
3000 ID = 10.5 A VDD = 40 V Ciss 1000 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V VDD = 30 V 6 4 Coss 100 Crss 2 f = 1 MHz VGS = 0 V 10 0 0 5 10 15 20 25 5 0.1 30 1 Figure 7. Gate Charge Characteristics 60 10 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 100 Figure 8. Capacitance vs Drain to Source Voltage 30 TJ = 25 oC TJ = 100 oC 50 40 VGS = 10 V 30 Limited by Package VGS = 8 V 20 10 TJ = 125 oC o RθJC = 1.8 C/W 1 0.01 0.
PAGE 5
2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 125 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS86320 Rev.C2 5 www.fairchildsemi.
PAGE 6
FDMS86320 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout 5.20 4.90 A PKG CL 8 5 0.35 0.15 SEE DETAIL B B 0.30 0.10 6.25 5.90 PKG CL 5.85 5.65 DETAIL B 1 SCALE: 2:1 4 TOP VIEW OPTIONAL DRAFT ANGLE MAY APPEAR ON FOUR SIDES OF THE PACKAGE 5.00 4.80 SEE DETAIL C 0.10 C 0.05 0.00 8X SIDE VIEW 0.08 C 1.10 0.90 3.81 1.27 0.51 (8X) 0.31 2 3 0.10 C A B 4 0.76 0.44 (0.52) 3.58 3.38 (0.50) (3.40) (0.30) 4.22 3.99 (2X) 8 DETAIL C C SEATING PLANE SCALE: 2:1 (0.
PAGE 7
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.