Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMS86322, MOSFET

October 2010

FDMS86322 RevC

www.fairchildsemi.com

FDMS86322 N-Channel PowerTrench

MOSFET

FDMS86322

N-Channel PowerTrench

MOSFET

80 V, 60 A, 7.65 m:

Features

 Max r

DS(on)

= 7.65 m: at V

= 10 V, I

= 13 A

 Max r

DS(on)

= 12 m: at V

= 6 V, I

= 7.2 A

 Advanced Package and Silicon combination for low r

DS(on)

and high efficiency

 MSL1 robust package design

 100% UIL tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process thant has

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Application

 DC-DC Conversion

Pin 1

Bottom

Top

Power 56

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 80 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) T

= 25 °C 60

-Continuous (Silicon limited) T

= 25 °C 83

-Continuous T

= 25 °C (Note 1a) 13

-Pulsed 200

Single Pulse Avalanche Energy (Note 3) 135 mJ

Power Dissipation T

= 25 °C 104

Power Dissipation T

= 25 °C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

TJC

Thermal Resistance, Junction to Case 1.2

°C/W

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86322 FDMS86322 Power 56 13 ’’ 12 mm 3000 units

Summary of content (7 pages)

PAGE 1
FDMS86322 N-Channel PowerTrench® MOSFET 80 V, 60 A, 7.65 m: Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 7.65 m: at VGS = 10 V, ID = 13 A Max rDS(on) = 12 m: at VGS = 6 V, ID = 7.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 800 nA IGSS Gate to Source Leakage Current, Forward VGS = ±20 V, VDS = 0 V 100 nA 4.
PAGE 3
200 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 5 VGS = 10 V PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 150 VGS = 6 V VGS = 5.5 V 100 VGS = 5 V 50 VGS = 4.5 V 0 0 1 2 3 4 VGS = 4.5 V 4 VGS = 5 V 3 VGS = 5.5 V 2 VGS = 6 V 1 0 5 0 50 100 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics 200 40 ID = 13 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.
PAGE 4
10000 ID = 13 A VDD = 50 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 75 V VDD = 25 V 6 4 Coss 1000 100 Crss 2 f = 1 MHz VGS = 0 V 10 0.1 0 0 10 20 30 40 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics 80 90 ID, DRAIN CURRENT (A) TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 75 60 VGS = 10 V 45 Limited by Package 30 VGS = 6 V 15 o RTJC = 1.2 C/W 1 0.001 0.01 0.
PAGE 5
2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE 0.001 0.0005 -3 10 o RTJA = 125 C/W -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve FDMS86322 Rev C 5 www.fairchildsemi.
PAGE 6
FDMS86322 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout FDMS86322 Rev C 6 www.fairchildsemi.
PAGE 7
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.