Datasheet

FDMS86520 N-Channel PowerTrench
®
MOSFET
www.fairchildsemi.com
2
©2013 Fairchild Semiconductor Corporation
FDMS86520 Rev. C2
Electrical Characteristics T
J
= 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BV
DSS
Drain to Source Breakdown Voltage I
D
= 250 μA, V
GS
= 0 V 60 V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, referenced to 25 °C 30 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 48 V, V
GS
= 0 V 1 μA
I
GSS
Gate to Source Leakage Current V
GS
= ±20 V, V
DS
= 0 V ±100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250 μA 2.5 3.6 4.5 V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 250 μA, referenced to 25 °C -11 mV/°C
r
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 14 A 6.0 7.4
mΩV
GS
= 8 V, I
D
= 12.5 A 7.3 10.3
V
GS
= 10 V, I
D
= 14 A, T
J
= 125 °C 9 11
g
FS
Forward Transconductance V
DS
= 10 V, I
D
= 14 A 49 S
C
iss
Input Capacitance
V
DS
= 30 V, V
GS
= 0 V,
f = 1 MHz
2140 2850 pF
C
oss
Output Capacitance 624 830 pF
C
rss
Reverse Transfer Capacitance 24 40 pF
R
g
Gate Resistance 0.1 0.7 2.1 Ω
t
d(on)
Turn-On Delay Time
V
DD
= 30 V, I
D
= 14 A,
V
GS
= 10 V, R
GEN
= 6 Ω
17 31 ns
t
r
Rise Time 6.7 14 ns
t
d(off)
Turn-Off Delay Time 20 32 ns
t
f
Fall Time 410ns
Q
g
Total Gate Charge V
GS
= 0 V to 10 V
V
DD
= 30 V,
I
D
= 14 A
28 40 nC
Q
g
Total Gate Charge V
GS
= 0 V to 8 V 23 33 nC
Q
gs
Gate to Source Charge 10.9 nC
Q
gd
Gate to Drain “Miller” Charge 5.6 nC
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.1 A (Note 2) 0.74 1.2
V
V
GS
= 0 V, I
S
= 14 A (Note 2) 0.83 1.3
t
rr
Reverse Recovery Time
I
F
= 14 A, di/dt = 100 A/μs
37 60 ns
Q
rr
Reverse Recovery Charge 21 35 nC
t
rr
Reverse Recovery Time
I
F
= 14 A, di/dt = 300 A/μs
31 49 ns
Q
rr
Reverse Recovery Charge 40 64 nC
Notes:
1. R
θJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
AS
of 86 mJ is based on starting T
J
= 25 °C, L = 0.3 mH, I
AS
= 24 A, V
DD
= 54 V, V
GS
= 10 V.
a) 50 °C/W when mounted on a
1 in
2
pad of 2 oz copper
b)
125 °C/W when mounted on a
minimum pad of 2 oz copper.