Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDMS86540, MOSFET

May 2013

FDMS86540 Rev. C3

www.fairchildsemi.com

FDMS86540 N-Channel PowerTrench

MOSFET

FDMS86540

N-Channel PowerTrench

MOSFET

60 V, 50 A, 3.4 mΩ

Features

 Max r

DS(on)

= 3.4 mΩ at V

= 10 V, I

= 20 A

 Max r

DS(on)

= 4.1 mΩ at V

= 8 V, I

= 18.5 A

 Advanced Package and Silicon combination for low r

DS(on)

and high efficiency

 Next generation enhanced body diode technology,

engineered for soft recovery

 MSL1 robust package design

 100% UIL tested

 RoHS Compliant

General Description

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency and to minimize switch node

ringing of DC/DC converters using either synchronous or

conventional switching PWM controllers.It has been optimized

for low gate charge, low r

DS(on)

, fast switching speed and body

diode reverse recovery performance.

Applications

 Primary Switch in isolated DC-DC

 Synchronous Rectifier

 Load Switch

Power 56

Pin 1

Bottom

Top

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 60 V

Gate to Source Voltage ±20 V

Drain Current -Continuous T

= 25 °C 50

A -Continuous T

= 25 °C (Note 1a) 20

-Pulsed (Note 4) 350

Single Pulse Avalanche Energy (Note 3) 228 mJ

Power Dissipation T

= 25 °C 96

Power Dissipation T

= 25 °C (Note 1a) 2.5

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJC

Thermal Resistance, Junction to Case 1.3

°C/W

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 50

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86540 FDMS86540 Power 56 13 ’’ 12 mm 3000 units

Summary of content (7 pages)

PAGE 1
FDMS86540 N-Channel PowerTrench® MOSFET 60 V, 50 A, 3.4 mΩ Features General Description Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Max rDS(on) = 4.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 60 V 28 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source
PAGE 3
5 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 350 VGS = 9 V 280 VGS = 8 V VGS = 7 V 210 140 VGS = 6 V 70 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 5 VGS = 6 V 4 VGS = 7 V 3 VGS = 8 V 2 1 0 0 70 Figure 1. On-Region Characteristics 210 280 350 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 15 1.6 ID = 20 A VGS = 10 V 1.5 rDS(on), DRAIN TO 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 SOURCE ON-RESISTANCE (mΩ) 1.
PAGE 4
10000 ID = 20 A Ciss VDD = 30 V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 40 V VDD = 20 V 6 4 Coss 1000 100 2 Crss f = 1 MHz VGS = 0 V 0 0 10 20 30 40 50 60 10 0.1 70 1 10 60 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 100 140 o ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) RθJC = 1.3 C/W TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 1 0.01 0.
PAGE 5
NORMALIZED THERMAL IMPEDANCE, ZθJA 2 1 0.1 0.01 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 0.001 o RθJA = 125 C/W 0.0001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2012 Fairchild Semiconductor Corporation FDMS86540 Rev. C3 5 www.fairchildsemi.
PAGE 6
FDMS86540 N-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2012 Fairchild Semiconductor Corporation FDMS86540 Rev. C3 6 www.fairchildsemi.
PAGE 7
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.