Datasheet

tm
May 2009
FDMS8670S N-Channel PowerTrench
®
SyncFET
TM
©2009 Fairchild Semiconductor Corporation
FDMS8670S Rev.C5
www.fairchildsemi.com
1
FDMS8670S
N-Channel PowerTrench
®
SyncFET
TM
30V, 42A, 3.5m:
Features
 Max r
DS(on)
= 3.5m: at V
GS
= 10V, I
D
= 20A
 Max r
DS(on)
= 5.0m: at V
GS
= 4.5V, I
D
= 17A
 Advanced Package and Silicon combination for low r
DS(on)
and high efficiency
 SyncFET Schottky Body Diode
 MSL1 robust package design
 RoHS Compliant
General Description
The FDMS8670S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance. This
device has the added benefit of an efficient monolithic Schottky
body diode.
Application
 Synchronous Rectifier for DC/DC Converters
 Notebook Vcore/ GPU low side switch
 Networking Point of Load low side switch
 Telecom secondary side rectification
MOSFET Maximum Ratings T
A
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25°C 42
A
-Continuous (Silicon limited) T
C
= 25°C 116
 -Continuous (Silicon limited) T
C
= 100°C 74
-Continuous T
A
= 25°C 20
-Pulsed 200
P
D
Power Dissipation T
C
= 25°C 78
WPower Dissipation T
A
= 25°C (Note 1a) 2.5
Power Dissipation T
A
= 85°C (Note 1a) 1.3
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
TJC
Thermal Resistance, Junction to Case 1.6
°C/W
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8670S FDMS8670S Power 56 13’’ 12mm 3000 units
4
3
2
1
5
6
7
8
D
D
D
D
G
S
S
S
Bottom
Power 56
Top
Pin 1
G
S
S
S
D
D
D
D