Datasheet
May 2009
©2009 Fairchild Semiconductor Corporation
FDMS8880 Rev.C1
www.fairchildsemi.com
1
FDMS8880 N-Channel PowerTrench
®
MOSFET
FDMS8880
N-Channel PowerTrench
®
MOSFET
30 V, 21 A, 8.5 m:
Features
Max r
DS(on)
= 8.5 m: at V
GS
= 10 V, I
D
= 13.5 A
Max r
DS(on)
= 13.0 m: at V
GS
= 4.5 V, I
D
= 10.9 A
Advanced Package and Silicon combination
for low r
DS(on)
and high efficiency
MSL1 robust package design
RoHS Compliant
General Description
The FDMS8880 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
DS(on)
while maintaining excellent switching performance.
Applications
Synchronous Buck for Notebook Vcore and Server
Notebook Battery Pack
Load Switch
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 21
A
-Continuous (Silicon limited) T
C
= 25 °C 51
-Continuous T
A
= 25 °C (Note 1a) 13.5
-Pulsed 80
E
AS
Single Pulse Avalanche Energy (Note 3) 60 mJ
P
D
Power Dissipation T
C
= 25 °C 42
W
Power Dissipation T
A
= 25 °C (Note 1a) 2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to +150 °C
R
TJC
Thermal Resistance, Junction to Case 3.3
°C/W
R
TJA
Thermal Resistance, Junction to Ambient (Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8880 FDMS8880 Power 56 13 ’’ 12 mm 3000 units
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Bottom
Power 56
Top
Pin 1
G
S
S
S
D
D
D
D