Datasheet

July 2011
©2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
1
N-Channel PowerTrench
®
MOSFET
30 V, 21 A, 9.5 m:
Features
Max r
DS(on)
= 9.
5 m: at V
GS
= 10 V
,
I
D
= 13.5 A
Max r
DS(on)
= 14.5 m: at V
GS
= 4.5 V, I
D
= 10.9 A
Advanced Package and Silicon combination
for low r
DS(on)
and high efficiency
MSL1 robust package design
RoHS Compliant
General Description
The
has been designed to minimize losses in
conversion application. Advancements in both silicon
r
DS(on)
while maintaining excellent switching performance.
Applications
Synchronous Buck for Notebook Vcore and S
erver
Notebook Battery Pack
Load Switch
MOSFET Maximum Ratings T
A
= 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DS
Drain to Source Voltage 30 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current -Continuous (Package limited) T
C
= 25 °C 21
A
-Continuous (Silicon limited) T
C
= 25 °C51
-Continuous T
A
= 25 °C (Note 1a) 13.5
-Pulsed 80
E
AS
Single Pulse Avalanche Energy (Note 3) 54
mJ
P
D
Power Dissipation T
C
= 25 °C
42
W
Power Dissipation T
A
= 25 °C (Note 1a)
2.5
T
J
, T
STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
R
TJC
Thermal Resistance, Junction to Case 3.3
°C/W
R
TJA
Thermal Resistance, Junction to Ambient
(Note 1a) 50
Device Marking Device Package Reel Size Tape Width Quantity
8888
Power 56 13 ’’ 12 mm 3000 units
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
Bottom
Power 56
Top
Pin 1
G
S
S
S
D
D
D
D
FDMS8888 NNNN
FDMS8888
N-Channel PowerTrench
®
MOSFET
FDMS8888
FDMS8888 Rev.C
FDMS8888
power
and
package technologies have been combined to offer the lowest

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