Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDN302P, MOSFET

October 2000

2000 Fairchild Semiconductor Corporation

FDN302P Rev C(W)

FDN302P

P-Channel 2.5V Specified PowerTrench







MOSFET

General Description

This P-Channel 2.5V specified MOSFET uses a rugged

gate version of Fairchild’s advanced PowerTrench

process. It has been optimized for power management

applications with a wide range of gate drive voltage

(2.5V – 12V).

Applications

• Power management

• Load switch

• Battery protection

Features

• –20 V, –2.4 A. R

DS(ON)

= 0.055 Ω @ V

= –4.5 V

DS(ON)

= 0.080 Ω @ V

= –2.5 V

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• SuperSOT

-3 provides low R

DS(ON)

and 30% higher

power handling capability than SOT23 in the same

footprint

SuperSOT -3

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage

–20

GSS

Gate-Source Voltage

±12

Drain Current – Continuous (Note 1a)

–2.4

– Pulsed

–10

Maximum Power Dissipation (Note 1a) 0.5P

(Note 1b)

0.46

, T

STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 250

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 75

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

302 FDN302P 7’’ 8mm 3000 units

FDN302P

Summary of content (5 pages)

PAGE 1
FDN302P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –20 V, –2.4 A. RDS(ON) = 0.055 Ω @ VGS = –4.5 V RDS(ON) = 0.080 Ω @ VGS = –2.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –12 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ===∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA On Characteristics –20 V
PAGE 3
FDN302P Typical Characteristics 3 15 -3.5V -3.0V -2.5V -4.0V 12 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) VGS = -4.5V 9 6 -2.0V 3 VGS = -2.0V 2.5 2 -2.5V 1.5 -3.0V -3.5V -4.0V 1 -4.5V 0.5 0 0 0.5 1 1.5 2 0 2.5 3 6 Figure 1. On-Region Characteristics. 15 0.16 ID = -1.2 A ID = -2.4A VGS = -4.5V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 12 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
PAGE 4
FDN302P Typical Characteristics 1400 VDS = -5V ID = -2.4A f = 1MHz VGS = 0 V 1200 -10V 4 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 1000 CISS 800 600 400 COSS 1 200 0 CRSS 0 0 2 4 6 8 0 10 2 Figure 7. Gate Charge Characteristics. 6 8 10 12 Figure 8. Capacitance Characteristics. 20 P(pk), PEAK TRANSIENT POWER (W) 100 RDS(ON) LIMIT 1ms 10 10ms 100ms 1s 1 10s DC VGS =-4.5V SINGLE PULSE RθJA = 270oC/W 0.1 TA = 25oC 0.01 0.
PAGE 5
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