Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDN304P, MOSFET

January 2001

2001 Fairchild Semiconductor Corporation

FDN304P Rev C(W)

FDN304P

P-Channel 1.8V Specified PowerTrench







MOSFET

General Description

This P-Channel 1.8V specified MOSFET uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

Applications

• Battery management

• Load switch

• Battery protection

Features

• –2.4 A, –20 V. R

DS(ON)

= 52 mΩ @ V

= –4.5 V

DS(ON)

= 70 mΩ @ V

= –2.5 V

DS(ON)

= 100 mΩ @ V

= –1.8 V

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• SuperSOT

-3 provides low R

DS(ON)

and 30% higher

power handling capability than SOT23 in the same

footprint

SuperSOT -3

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –20 V

GSS

Gate-Source Voltage

±8

Drain Current – Continuous (Note 1a) –2.4 A

– Pulsed –10

Maximum Power Dissipation (Note 1a) 0.5P

(Note 1b)

0.46

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 250

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 75

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

304 FDN304P 7’’ 8mm 3000 units

FDN304P

Summary of content (5 pages)

PAGE 1
FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –2.4 A, –20 V. Applications • Fast switching speed • Battery management • High performance trench technology for extremely low RDS(ON) • Load switch • Battery protection RDS(ON) = 52 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.
PAGE 2
Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –13 mV/°C Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA On Cha
PAGE 3
FDN304P Typical Characteristics 15 4 VGS = -4.5V -2.5V -ID, DRAIN CURRENT (A) -3.0V 3.5 12 -2.0V VGS = -1.5V 3 9 2.5 -1.8V -1.8V 2 6 -2.0V 1.5 -1.5V 3 -2.5V -3.0V 1 -4.5V 0.5 0 0 0.5 1 1.5 2 0 2.5 3 6 9 12 15 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.14 1.5 ID = -1.2 A ID = -2.4A VGS = -4.5V 1.4 0.12 1.3 0.1 1.2 1.1 0.08 o TA = 125 C 1 0.
PAGE 4
FDN304P Typical Characteristics 5 2100 f = 1MHz VGS = 0 V VDS = -5V ID = -2.4A -10V 1800 4 CISS -15V 1500 3 1200 900 2 600 COSS 1 300 CRSS 0 0 0 2 4 6 8 10 12 0 14 5 10 15 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 20 SINGLE PULSE RθJA = 270°C/W TA = 25°C RDS(ON) 1ms 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 15 10ms 100ms 1 10 1s 10s DC VGS =-4.5V SINGLE PULSE 0.1 5 o RθJA = 270 C/W o TA = 25 C 0.
PAGE 5
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