Datasheet

March 2003
2003 Fairchild Semiconductor Corporation
FDN304PZ Rev C (W)
FDN304PZ
P-Channel 1.8V Specified PowerTrench

MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
Features
• –2.4 A, –20 V. R
DS(ON)
= 52 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 70 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 100 mΩ @ V
GS
= –1.8 V
• Fast switching speed
• ESD protection diode
• High performance trench technology for extremely
low R
DS(ON)
• SuperSOT
TM
-3 provides low R
DS(ON)
and 30% higher
power handling capability than SOT23 in the same
footprint
G
D
S
SuperSOT -3
TM
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage
±8
V
I
D
Drain Current – Continuous (Note 1a) –2.4 A
– Pulsed –10
Maximum Power Dissipation (Note 1a) 0.5 P
D
(Note 1b)
0.46
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 75
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
04Z FDN304PZ 7’’ 8mm 3000 units
FDN304P
Z
D
S
G