Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDN308P, MOSFET

February 2001

2001 Fairchild Semiconductor Corporation

FDN308P Rev B(W)

FDN308P

P-Channel 2.5V Specified PowerTrench







MOSFET

General Description

This P-Channel 2.5V specified MOSFET uses a rugged

gate version of Fairchild’s advanced PowerTrench

process. It has been optimized for power management

applications with a wide range of gate drive voltage

(2.5V – 12V).

Applications

• Power management

• Load switch

• Battery protection

Features

• –20 V, –1.5 A. R

DS(ON)

= 125 mΩ @ V

= –4.5 V

DS(ON)

= 190 mΩ @ V

= –2.5 V

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• SuperSOT

-3 provides low R

DS(ON)

and 30% higher

power handling capability than SOT23 in the same

footprint

SuperSOT -3

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –20 V

GSS

Gate-Source Voltage

±12

Drain Current – Continuous (Note 1a) –1.5 A

– Pulsed

–10

Maximum Power Dissipation (Note 1a)

0.5

(Note 1b)

0.46

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient

(Note 1a) 250

°C/W

θJC

Thermal Resistance, Junction-to-Case

(Note 1) 75

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

308 FDN308P 7’’ 8mm 3000 units

FDN308P

Summary of content (5 pages)

PAGE 1
FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –20 V, –1.5 A. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.
PAGE 2
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = –250 µA –20 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA –1.0 3 –1.
PAGE 3
FDN308P Typical Characteristics 10 -ID, DRAIN CURRENT (A) -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 VGS = -4.5V -4.0V -3.0V 8 6 -2.5V 4 -2.0V 2 1.8 VGS = -2.5V 1.6 1.4 -3.0V -3.5V 1.2 -4.0V -4.5V 1 0.8 0 0 1 2 3 0 4 2 4 Figure 1. On-Region Characteristics. 8 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.34 1.5 ID = -0.8 A ID = -1.5A VGS = -4.5V 1.
PAGE 4
Typical Characteristics 500 f = 1MHz VGS = 0 V VDS = -5V ID = -1.5A -10V 400 4 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 CISS 300 200 COSS 1 100 0 0 CRSS 0 1 2 3 4 0 5 5 10 15 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 20 SINGLE PULSE RθJA = 270°C/W TA = 25°C RDS(ON) LIMIT 1ms 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 15 10ms 100ms 1s 1 VGS =-4.5V SINGLE PULSE 0.
PAGE 5
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