Datasheet

October 2001
2001 Fairchild Semiconductor Corporation
FDN327N Rev C (W)
FDN327N
N-Channel 1.8 Vgs Specified PowerTrench

MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• Load switch
• Battery protection
• Power management
Features
• 2 A, 20 V. R
DS(ON)
= 70 mΩ @ V
GS
= 4.5 V
R
DS(ON)
= 80 mΩ @ V
GS
= 2.5 V
R
DS(ON)
= 120 mΩ @ V
GS
= 1.8 V
• Low gate charge (4.5 nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 20 V
V
GSS
Gate-Source Voltage
± 8
V
I
D
Drain Current – Continuous (Note 1a) 2 A
– Pulsed 8
Power Dissipation for Single Operation (Note 1a) 0.5
P
D
(Note 1b)
0.46
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 75
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
327 FDN327N 7’’ 8mm 3000 units
FDN327N