Datasheet

January 2005
©2005 Fairchild Semiconductor Corporation
FDN306P Rev D
FDN336P
Single P-Channel 2.5V Specified PowerTrench
®
MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits and DC/DC conversion.
Features
• –1.3 A, –20 V. R
DS(ON)
= 0.20 Ω @ V
GS
= –4.5 V
R
DS(ON)
= 0.27 Ω @ V
GS
= –2.5 V
• Low gate charge (3.6 nC typical)
• High performance trench technology for extremely
low R
DS(ON)
• SuperSOT
TM
-3 provides low R
DS(ON)
and 30%
higher power handling capability than SOT23 in
the same footprint
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –20 V
V
GSS
Gate-Source Voltage
±8
V
I
D
Drain Current – Continuous (Note 1a)
–
1.3
A
– Pulsed –10
Maximum Power Dissipation (Note 1a) 0.5 P
D
(Note 1b)
0.46
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 250
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 75
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
336 FDN336P 7’’ 8mm 3000 units
FDN336P