Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDN338P, MOSFET

2001 Fairchild Semiconductor Corporation FDN338P Rev F1(W)

FDN338P

P-Channel 2.5V Specified PowerTrench



MOSFET

General Description

This P-Channel 2.5V specified MOSFET uses

Fairchild’s advanced low voltage PowerTrench process.

It has been optimized for battery power management

applications.

Applications

• Battery management

• Load switch

• Battery protection

Features

• –1.6 A, –20 V. R

DS(ON)

= 115 mΩ @ V

= –4.5 V

DS(ON)

= 155 mΩ @ V

= –2.5 V

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• SuperSOT

-3 provides low R

DS(ON)

and 30% higher

power handling capability than SOT23 in the same

footprint

SuperSOT -3

Absolute Maximum Ratings T

=25

C unless otherwise noted

Symbol Parameter Ratings Units

DSS

Drain-Source Voltage –20 V

GSS

Gate-Source Voltage

±8

Drain Current – Continuous –1.6 A

– Pulsed –5

Maximum Power Dissipation (Note 1a) 0.5 P

(Note 1b)

0.46

, T

STG

Operating and Storage Junction Temperature Range –55 to +150

°C

Thermal Characteristics

θJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 250

°C/W

θJC

Thermal Resistance, Junction-to-Case (Note 1) 75

°C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

338 FDN338P 7’’ 8mm 3000 units

FDN338P

November 2013

Summary of content (5 pages)

PAGE 1
FDN338P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.6 A, –20 V. RDS(ON) = 115 mΩ @ V GS = –4.5 V RDS(ON) = 155 mΩ @ V GS = –2.
PAGE 2
Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –16 mV/°C Off Characteristics ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage V GS = 0 V, ID = –250 µA Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current V DS = –16 V, V GS = 0 V IGSSF Gate–Body Leakage, Forward V GS = 8 V, V DS = 0 V 100 µA nA IGSSR Gate–Body Leakage, Reverse V GS = –8 V, V DS = 0 V –100 nA BV DSS On C
PAGE 3
FDN338P Typical Characteristics 5 2.2 V GS = -4.5V -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -2.5V -2.0V -ID , DRAIN CURRENT (A) 4 3 2 1 2 VGS = -2.0V 1.8 1.6 1.4 -2.5V -3.0V 1.2 -3.5V -4.5V 1 0.8 0 0 0.5 1 1.5 0 2 1 Figure 1. On-Region Characteristics. 4 5 0.34 ID = -0.8 A ID = -1.6A V GS = -4.5V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 1.4 1.
PAGE 4
FDN338P Typical Characteristics 5 600 I D = -1.6A V DS = -5V -V GS, GATE-SOURCE VOLTAGE (V) -10V f = 1MHz VG S = 0 V 500 4 CISS -15V 400 3 300 2 200 CO S S 1 100 CR S S 0 0 0 1 2 3 4 5 0 2 Q g , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 6 8 10 20 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 1ms 10ms 100ms 1 1s 10s DC V GS =-4.5V SINGLE PULSE Rθ JA = 270oC/W 0.1 TA = 25o C 0.01 0.1 1 10 SINGLE PULSE RθJA = 270°C/W TA = 25°C 15 10 5 0 0.001 100 0.
PAGE 5
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