Datasheet

FDN342P
FDN342P Rev. B
FDN342P
P-Channel 2.5V Specified PowerTrench
TM
MOSFET
August 1999
Features
 -2 A, -20 V. R
DS(ON)
= 0.08 Ω @ V
GS
= -4.5 V
R
DS(ON)
= 0.13 Ω @ V
GS
= -2.5 V.
 Rugged gate rating (±12V).
 High performance trench technology for extremely
low R
DS(ON)
.
 Enhanced power SuperSOT
TM
-3 (SOT-23).
1999 Fairchild Semiconductor Corporation
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage -20 V
V
GSS
Gate-Source Voltage
±12
V
I
D
Drain Current - Continuous (Note 1a) -2 A
- Pulsed -10
P
D
Power Dissipation for Single Operation (Note 1a) 0.5 W
(Note 1b)
0.46
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
°C/W
R
θ
JC
Thermal Resistance, Junction-to-Case (Note 1) 75
°C/W
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDN342P FDN342P 7’’ 8mm 3000 units
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages (2.5V - 12V).
Applications
 Load switch
 Battery protection
 Power management
G
D
S
SuperSOT -3
TM
D
S
G