Datasheet

©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
August 2005
FDN352AP Rev. C1
FDN352AP Single P-Channel, PowerTrench
®
MOSFET
FDN352AP
Single P-Channel, PowerTrench
®
MOSFET
Features
■ –1.3 A, –30V R
DS(ON)
= 180 m Ω @ V
GS
= –10V
–1.1 A, –30V R
DS(ON)
= 300 m Ω @ V
GS
= –4.5V
■ High performance trench technology for extremely low
R
DS(ON)
.
■ High power version of industry Standard SOT-23 package.
Identical pin-out to SOT-23 with 30% higher power handling
capability.
Applications
■ Notebook computer power management
General Description
This P-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor advanced Power Trench process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching perfor-
mance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss is needed in a
very small outline surface mount package.
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Package Marking and Ordering Information
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –30 V
V
GSS
Gate-Source Voltage ± 25 V
I
D
Drain Current – Continuous (Note 1a) –1.3 A
– Pulsed –10
P
D
Power Dissipation for Single Operation (Note 1a) 0.5 W
(Note 1b) 0.46
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150 ° C
Thermal Characteristics
R
θ JA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250 ° C/W
R
θ JC
Thermal Resistance, Junction-to-Case (Note 1) 75
Device Marking Device Reel Size Tape width Quantity
52AP FDN352AP 7’’ 8mm 3000 units
G
SuperSOT™-3
G
S
D
D
G S