Datasheet

January 2006
©2006 Fairchild Semiconductor Corporation
FDN359BN Rev A(W)
FDN359BN
N-Channel Logic Level PowerTrench
TM
MOSFET
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild’s Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
•
2.7 A, 30 V. R
DS(ON)
= 0.046 Ω @ V
GS
= 10 V
R
DS(ON)
= 0.060 Ω @ V
GS
= 4.5 V
• Very fast switching speed.
• Low gate charge (5nC typical)
• High performance version of industry standard
SOT-23 package. Identical pin out to SOT-23 with 30%
higher power handling capability.
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
±20
V
Maximum Drain Current – Continuous (Note 1a) 2.7
I
D
– Pulsed 15
A
Maximum Power Dissipation (Note 1a) 0.5
P
D
(Note 1b)
0.46
W
T
J
, T
STG
Operating and Storage Temperature Range
−55 to +150 °C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 250
°C/W
R
θJC
Thermal Resistance, Junction-to-Case
(Note 1) 75
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
359B FDN359BN 7’’ 8mm 3000 units
FDN359BN