Datasheet

May 2003
2003 Fairchild Semiconductor Corporation
FDN360P Rev F1 (W)
FDN360P
Single P-Channel, PowerTrench

MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• –2 A, –30 V. R
DS(ON)
= 80 mΩ @ V
GS
= –10 V
R
DS(ON)
= 125 mΩ @ V
GS
= –4.5 V
• Low gate charge (6.2 nC typical)
• High performance trench technology for extremely
low R
DS(ON)
.
• High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability.
G
D
S
SuperSOT -3
TM
D
SG
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –30 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous (Note 1a) –2 A
– Pulsed –10
Power Dissipation for Single Operation (Note 1a) 0.5
P
D
(Note 1b)
0.46
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 75
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
360 FDN360P 7’’ 8mm 3000 units
FDN360P