Datasheet

2009 Fairchild Semiconductor Corporation
FDN361BN Rev A1(W)
www.fairchildsemi.com
FDN361BN
30V N-Channel, Logic Level, PowerTrench

MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using Fairchild Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
Features
x 1.4 A, 30 V. R
DS(ON)
= 110 m: @ V
GS
= 10 V
R
DS(ON)
= 160 m: @ V
GS
= 4.5 V
x Low gate charge
x Industry standard outline SOT-23 surface mount
package using proprietary SuperSOT
TM
-3 design for
superior thermal and electrical capabilities
x High performance trench technology for extremely
low R
DS(ON)
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage 30 V
V
GSS
Gate-Source Voltage
r 20
V
I
D
Drain Current – Continuous (Note 1a) 1.4 A
– Pulsed 10
Power Dissipation for Single Operation (Note 1a) 0.5
P
D
(Note 1b)
0.46
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
qC
Thermal Characteristics
R
TJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 250
qC/W
R
TJC
Thermal Resistance, Junction-to-Case
(Note 1) 75
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
361B FDN361BN 7’’ 8mm 3000 units
FDN361BN 30V N-Channel, Logic Level, PowerTrench

MOSFET
Fe bruary 2009