Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDN537N, MOSFET

January 2013

FDN537N Single N-Channel Power Trench

MOSFET

FDN537N Rev.C2

FDN537N

Single N-Channel Power Trench

MOSFET

30 V, 6.5 A, 23 mΩ

Features

 Max r

DS(on)

= 23 mΩ at V

= 10 V, I

= 6.5 A

 Max r

DS(on)

= 36 mΩ at V

= 4.5 V, I

= 6.0 A

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability in a widely used

surface mount package

 Fast switching speed

 100% UIL Tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been optimized for

DS(on)

, switching performance and

ruggedness.

Application

 Primary DC-DC Switch

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 30 V

Gate to Source Voltage (Note 3) ±20 V

Drain Current -Continuous (Package limited) T

= 25 °C 8.0

A6.5 -Continuous T

= 25 °C (Note 1a)

-Pulsed 25

Power Dissipation (Note 1a) 1.5

Power Dissipation (Note 1b) 0.6

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

θJA

Thermal Resistance, Junction to Ambient (Note 1a) 80

°C/W

Thermal Resistance, Junction to Ambient (Note 1b) 180

Device Marking Device Package Reel Size Tape Width Quantity

537 FDN537N SSOT-3 7 ’’ 8 mm 3000 units

Summary of content (6 pages)

PAGE 1
FDN537N Single N-Channel Power Trench® MOSFET 30 V, 6.5 A, 23 mΩ Features General Description Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSS Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V 30 V 18 mV/°C 1 μA 100 nA 3.
PAGE 3
.5 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 25 VGS = 6 V VGS = 4.5 V 20 VGS = 4 V 15 10 VGS = 3.5 V 5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 0.4 0.8 1.2 1.6 2.0 VGS = 3.5 V 3.0 VGS = 4 V 2.5 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 2.0 VGS = 4.5 V 1.5 VGS = 6 V 1.0 0.5 VGS = 10 V 0 5 Figure 1. On Region Characteristics rDS(on), DRAIN TO 1.3 1.2 1.1 1.0 0.9 0.8 0.
PAGE 4
500 ID = 6.5 A VDD = 10 V Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 15 V 6 VDD = 20 V 4 100 Coss 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 4 5 6 1 Figure 7. Gate Charge Characteristics 30 Figure 8. Capacitance vs Drain to Source Voltage 8 9 8 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 7 TJ = 25 oC 6 5 TJ = 100 oC 4 TJ = 125 oC 3 6 VGS = 10 V 4 VGS = 4.5 V 2 o 2 RθJA = 80 C/W 1 0.01 0.
PAGE 5
2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 180 C/W 0.01 0.005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2013 Fairchild Semiconductor Corporation FDN537N Rev.C2 5 www.fairchildsemi.
PAGE 6
tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.