Datasheet

October 2000
2000 Fairchild Semiconductor Corporation
FDN5618P Rev C(W)
FDN5618P
60V P-Channel Logic Level PowerTrench


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MOSFET
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
• DC-DC converters
• Load switch
• Power management
Features
• –1.25 A, –60 V. R
DS(ON)
= 0.170 Ω @ V
GS
= –10 V
R
DS(ON)
= 0.230 Ω @ V
GS
= –4.5 V
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
G
D
S
SuperSOT -3
TM
D
S
G
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –60 V
V
GSS
Gate-Source Voltage
±20
V
I
D
Drain Current – Continuous (Note 1a) –1.25 A
– Pulsed –10
Maximum Power Dissipation (Note 1a) 0.5
P
D
(Note 1b)
0.46
W
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
°C/W
R
θJC
Thermal Resistance, Junction-to-Case (Note 1) 75
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
618 FDN5618P 7’’ 8mm 3000 units
FDN5618P