Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDN8601, MOSFET

FDN8601 N-Channel PowerTrench

MOSFET

FDN8601 Rev. C

www.fairchildsemi.com

July 2010

FDN8601

N-Channel PowerTrench

MOSFET



100 V, 2.7 A, 109 m:

Features

 Max r

DS(on)

= 109 m: at V

= 10 V, I

= 1.5 A

 Max r

DS(on)

= 175 m: at V

= 6 V, I

= 1.2 A

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability in a widely used

surface mount package

 Fast switching speed

 100% UIL tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been optimized for r

DS(on)

, switching performance and

ruggedness.

Applications

 Primary DC-DC Switch

 Load Switch

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

-Continuous (Note 1a) 2.7

-Pulsed 12

Single Pulse Avalanche Energy (Note 3) 13 mJ

Power Dissipation (Note 1a) 1.5

Power Dissipation (Note 1b) 0.6

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

TJC

Thermal Resistance, Junction to Case (Note 1) 75

°C/W

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 80

Device Marking Device Package Reel Size Tape Width Quantity

8601 FDN8601 SSOT-3 7 ’’ 8 mm 3000 units

Summary of content (6 pages)

PAGE 1
FDN8601 N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 109 m: Features General Description Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.
PAGE 3
5 VGS = 10 V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 12 VGS = 8 V VGS = 7 V 9 VGS = 6 V 6 VGS = 5 V 3 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 5 V 4 VGS = 6 V 3 2 VGS = 7 V 1 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 0 5 0 3 Figure 1. On-Region Characteristics 12 500 ID = 1.5 A VGS = 10 V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 -75 -50 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 9 Figure 2.
PAGE 4
300 ID = 1.5 A VDD = 25 V Ciss 100 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 50 V 6 VDD = 75 V 4 Coss 10 Crss 2 0 f = 1 MHz VGS = 0 V 0 1 2 3 1 0.1 4 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 7 20 10 6 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 5 TJ = 25 oC 4 TJ = 100 oC 3 TJ = 125 oC 100 us 1 1 ms 0.1 THIS AREA IS LIMITED BY rDS(on) 0.
PAGE 5
2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o RTJA = 180 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDN8601 Rev. C 5 www.fairchildsemi.
PAGE 6
tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.