Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDN86246, MOSFET

FDN86246 N-Channel PowerTrench

MOSFET

FDN86246 Rev.C

www.fairchildsemi.com

December 2010

FDN86246

N-Channel PowerTrench

MOSFET



150 V, 1.6 A, 261 m:

Features

 Max r

DS(on)

= 261 m: at V

= 10 V, I

= 1.6 A

 Max r

DS(on)

= 359 m: at V

= 6 V, I

= 1.4 A

 High performance trench technology for extremely low r

DS(on)

 High power and current handling capability in a widely used

surface mount package

 Fast switching speed

 100% UIL tested

 RoHS Compliant

General Description

This N-Channel MOSFET is produced using Fairchild

Semiconductor‘s advanced Power Trench

process that has

been optimized for r

DS(on)

, switching performance and

ruggedness.

Application

 PD Switch

MOSFET Maximum Ratings T

= 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol Parameter Ratings Units

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

-Continuous (Note 1a) 1.6

-Pulsed 6

Single Pulse Avalanche Energy (Note 3) 13 mJ

Power Dissipation (Note 1a) 1.5

Power Dissipation (Note 1b) 0.6

, T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

TJC

Thermal Resistance, Junction to Case (Note 1) 75

°C/W

TJA

Thermal Resistance, Junction to Ambient (Note 1a) 80

Device Marking Device Package Reel Size Tape Width Quantity

246 FDN86246 SSOT-3 7 ’’ 8 mm 3000 units

Summary of content (6 pages)

PAGE 1
FDN86246 N-Channel PowerTrench® MOSFET 150 V, 1.6 A, 261 m: Features General Description Max rDS(on) = 261 m: at VGS = 10 V, ID = 1.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. Max rDS(on) = 359 m: at VGS = 6 V, ID = 1.
PAGE 2
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient ID = 250 PA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 PA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4 V 150 V 106 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 'VGS(th) '
PAGE 3
VGS = 10 V VGS = 7 V VGS = 6 V 5 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX 4 3 VGS = 5.5 V 2 1 VGS = 5 V 0 0 1 2 3 4 5 VGS = 5 V 4 VGS = 5.5 V 3 VGS = 6 V 2 VGS = 7 V 1 0 5 0 1 2 Figure 1. On-Region Characteristics 5 6 800 ID = 1.6 A VGS = 10 V 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4 Figure 2.
PAGE 4
300 ID = 1.6 A VDD = 50 V 8 VDD = 75 V 6 VDD = 100 V 4 Ciss 100 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 Coss 10 2 f = 1 MHz VGS = 0 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 3.5 3.0 2.5 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) Crss 1 0.1 TJ = 25 oC 2.0 TJ = 100 oC 1.5 TJ = 125 1.0 0.01 100 us 1 1 ms 0.
PAGE 5
2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE o RTJA = 180 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDN86246 Rev.C 5 www.fairchildsemi.
PAGE 6
tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.