Datasheet

ManualsBrandsFAIRCHILD SEMICONDUCTOR ManualsFETsFDP020N06B_F102, MOSFET

November 2013

FDP020N06B — N-Channel PowerTrench

MOSFET

FDP020N06B Rev. C8

www.fairchildsemi.com

FDP020N06B

N-Channel PowerTrench

MOSFET

60 V, 313 A, 2 mΩ

Features

•R

DS(on)

= 1.65 mΩ ( Typ.) @ V

= 10 V, I

= 100 A

• Low FOM R

DS(on) *

• Low Reverse-Recovery Charge, Q

= 194 nC

• Soft Reverse-Recovery Body Diode

• Enables High Efficiency in Synchronous Rectification

• Fast Switching Speed

• 100% UIL Tested

• RoHS Compliant

Description

This N-Channel MOSFET is produced using Fairchild Semicon-

ductor’s advanced PowerTrench

process that has been tai-

lored to minimize the on-state resistance while maintaining

superior switching performance.

Applications

• Synchronous Rectification for ATX / Server / Telecom PSU

• Battery Protection Circuit

• Motor Drives and Uninterruptible Power Supplies

• Renewable System

Absolute Maximum Ratings T

= 25

C unless otherwise noteed.

* Package limitation current is 120A.

Thermal Characteristics

Symbol Parameter FDP020N06B_F102 Unit

DSS

Drain to Source Voltage 60 V

GSS

Gate to Source Voltage ±20 V

D r a i n C u r r e n t

- Continuous (T

= 25

C, Silicon Limited) 313*

A- Continuous (T

= 100

C, Silicon Limited) 221*

- Continuous (T

= 25

C, Package Limited) 120

D r a i n C u r r e n t - P u l s e d (Note 1) 1252 A

Single Pulsed Avalanche Energy (Note 2) 1859 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns

Power Dissipation

= 25

C) 333 W

- Derate Above 25

C2.2W/

, T

STG

Operating and Storage Temperature Range -55 to +175

Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds

300

Symbol Parameter FDP020N06B_F102 Unit

θJC

Thermal Resistance, Junction to Case, Max. 0.45

C/W

θJA

Thermal Resistance, Junction to Ambient, Max. 62.5

TO-220

Summary of content (9 pages)

PAGE 1
FDP020N06B N-Channel PowerTrench® MOSFET 60 V, 313 A, 2 mΩ Features Description • RDS(on) = 1.65 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
PAGE 2
Part Number FDP020N06B_F102 Top Mark FDP020N06B Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. Unit 60 - - V - 0.
PAGE 3
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 500 400 100 ID, Drain Current[A] ID, Drain Current[A] *Notes: 1. VDS = 10V 2. 250μs Pulse Test 100 *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 10 0.1 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 1 VDS, Drain-Source Voltage[V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage o -55 C 3 4 5 6 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 500 1.8 VGS = 10V 1.6 VGS = 20V 1.
PAGE 4
Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Varition vs. Temperature 1.8 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.08 1.04 1.00 *Notes: 1. VGS = 0V 2. ID = 250μA 0.96 0.94 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 1.2 1.0 *Notes: 1. VGS = 10V 2. ID = 100A 0.8 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs.
PAGE 5
FDP020N06B — N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve ZθJC (t), Thermal Response [o] C/W] Thermal Response [ZθJC 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.01 0.004 -5 10 ©2011 Fairchild Semiconductor Corporation FDP020N06B Rev. C8 t2 *Notes: 0.02 0.01 o 1. ZθJC(t) = 0.45 C/W Max. 2. Duty Factor, D= t1/t2 3.
PAGE 6
FDP020N06B — N-Channel PowerTrench® MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2011 Fairchild Semiconductor Corporation FDP020N06B Rev. C8 6 www.fairchildsemi.
PAGE 7
FDP020N06B — N-Channel PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17.
PAGE 8
FDP020N06B — N-Channel PowerTrench® MOSFET Mechanical Dimensions Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision.
PAGE 9
tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.