Datasheet

©2009 Fairchild Semiconductor Corporation
FDP054N10 Rev. C3
www.fairchildsemi.com
3
FDP054N10 — N-Channel PowerTrench
®
MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1
10
6
100
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25
o
C
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
I
D
, Drain Current[A]
V
DS
, Drain-Source Voltage[V]
1000
34567
1
10
100
1000
-55
o
C
150
o
C
* Notes :
1. V
DS
= 20V
2. 250
μs Pulse Test
25
o
C
I
D
, Drain Current[A]
V
GS
, Gate-Source Voltage[V]
0.2 0.4 0.6 0.8 1.0 1.2
1
10
100
1000
Notes:
1. V
GS
= 0V
2. 250
μs Pulse Test
150
o
C
I
S
, Reverse Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
25
o
C
0 100 200 300 400
3
4
5
6
7
* Note : T
C
= 25
o
C
V
GS
= 20V
V
GS
= 10V
R
DS(on)
[mΩ],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0 30 60 90 120 150 180
0
2
4
6
8
10
* Note : I
D
= 75A
V
DS
= 20V
V
DS
= 50V
V
DS
= 80V
V
GS
, Gate-Source Voltage [V]
Q
g
, Total Gate Charge [nC]
0.1 1 10
100
1000
10000
100000
C
oss
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
V
DS
, Drain-Source Voltage [V]
30